unisonic technologies co., ltd 7nm65 preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r205-042.b 7a, 650v n-channel super-junction mosfet ? description the utc 7nm65 is an super junction mosfet structure. it uses utc advanced planar stripe, dmos technology to provide customers perfect switching performance, minimal on-state resistance. the utc 7nm65 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. ? features * low drain-source on-resistance: r ds(on) < 0.9 ? (max.) by using super junction structure * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 7nm65l-tf3-t 7nm65g-tf3-t to-220 g d s tube 7nm65l-ta3-t 7NM65G-TA3-T to-220f g d s tube 7nm65l-tm3-t 7nm65g-tm3-t to-251 g d s tube 7nm65l-tn3-r 7nm65g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
7nm65 preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r205-042.b ? marking
7nm65 preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r205-042.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 2 a continuous i d 7 a drain current pulsed (note 2) i dm 28 a avalanche energy single pulsed (note 3) e as 60 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220f/to-220f1 48 power dissipation to-251/to-252 p d 60 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 30mh, i as = 2a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 7a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-220f/to-220f1 62.5 junction to ambient to-251/to-252 ja 110 c/w to-220f/to-220f1 2.6 junction to case to-251/to-252 jc 2.08 c/w
7nm65 preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r205-042.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650v, v gs = 0v 1 a forward v gs = 30v, v ds = 0v 100 na gate- source leakage current reverse i gss v gs = -30v, v ds = 0v -100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 3.5a 0.9 ? dynamic characteristics input capacitance c iss 375 pf output capacitance c oss 238 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0 mhz 26 pf switching characteristics turn-on delay time t d(on) 50 ns turn-on rise time t r 95 ns turn-off delay time t d(off) 160 ns turn-off fall time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 85 ns total gate charge q g 21 nc gate-source charge q gs 5 nc gate-drain charge q gd v ds =50v, i d =1.3a, v gs =10 v (note 1, 2) 5.8 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 7 a 1.4 v maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 28 a notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7nm65 preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r205-042.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
7nm65 preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r205-042.b ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l pulse width 1 s duty factor 0.1% v dd switching test circuit switching waveforms 50k ? 0.3f dut same type as d.u.t. 0.2f 12v v gs 3ma v ds gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
7nm65 preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r205-042.b utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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